e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Conference -SSSJ-34-
Argon Cluster Ions Cleaning and Probing a Graphene Layer on Copper
Kozo MochijiNorio InuiRyousuke AsaKousuke Moritani
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2015 Volume 13 Pages 167-173

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Abstract

We demonstrate a method to clean and probe a graphene layer on copper by using cluster ions consisting of thousands of argon (Ar) atoms. Ar cluster ions colliding with a solid at kinetic energies below ∼5 eV/atom dissociate into smaller cluster ions such as Ar2+ or Ar3+, and the dissociation rate (ease of dissociation) depends on the physical property of the solid. We apply this phenomenon to probe a graphene layer on copper. Contaminants at the graphene surface are removed without damage to the surface by Ar cluster ion bombardment and the cleanliness of the surface is simultaneously probed by measuring the dissociation rate. This rate gradually approaches the value for a clean surface. After cleaning, the dissociation rate for pristine graphene on copper is five times lower than that for bare copper, indicating that the graphene layer acts as a buffer against the impact force of the cluster ion upon collision. Accordingly, the method can probe the quality of graphene, such as carbon coverage, by comparing the dissociation rate with that for bare copper. Furthermore, the method can probe the interface between graphene and copper, showing that the dissociation rate increases with increasing copper oxidation. The obtained experimental results are compared with simulated results obtained by molecular dynamics simulation for the collisions of an Ar cluster ion with graphene on copper. The combined results are discussed with respect to the utility of the proposed method for controlling the quality of graphene in the manufacture of electronic or mechanical devices. [DOI: 10.1380/ejssnt.2015.167]

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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
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