Observation of Point Contact Visible Luminescence from Ga-Doped ZnO Layers

Abstract

We report the point contact visible luminescence from Ga-doped ZnO layers. The Ga-doped ZnO layers were grown by the thermal oxidation of ZnS substrates with gallium in the air. The injected light emission was observed around the point-contact surface of ZnO layers when a forward DC voltage in the range of 2.5-9.8 V was applied (point contact was positive). Typically, we illustrated the luminescent spectrum for 6.7 V which showed a wide emission band centering at 680 nm. [DOI: 10.1380/ejssnt.2015.201]