e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
Conference -ISSS-8-
STM-Induced SiO2 Decomposition on Si(110)
Masahiro YanoYuki UozumiSatoshi YasudaHidehito AsaokaChie TsukadaHikaru YoshidaAkitaka Yoshigoe
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2018 Volume 16 Pages 370-374

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Abstract

Real-time scanning tunneling microscope (STM) measurements are performed during the thermal decomposition of an oxide layer on Si(110). Voids in which only oxide is removed are formed during the real-time measurements, unlike the thermal decomposition in which bulk Si is desorbed with oxide. Analysis of the STM images reveals that the measurement induces the decomposition of the oxide layer resulting from electron injection into the defect sites. The activation energy of thermal decomposition decreases by 0.4 eV in the range of 700—780°C. [DOI: 10.1380/ejssnt.2018.370]

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