Abstract
Two new methods for fabrication of silicon-on-isolator (SOI) structures are studied. The first one is based on the formation of a template single crystalline Si-layer and combines encapsulated solid-vapor-phase epitaxy of silicon on rare-earth-metal-oxide layer, developed for fabrication of oxide/silicon/oxide heterostructures, subsequent chemical etching of the second oxide layer, followed by vapor-phase epitaxial growth of silicon on the template-silicon layer. In the second method, crystalline silicon islands serve as template for further growth of crystalline Si layer. Structural investigations show no interface and no noticeable differences in structure quality between these two silicon sub-layers grown on each other. Silicon-substrate/oxide/silicon heterostructure exhibits transition of the substrate crystalline structure with A/B/A twinning relationship. Initial stage of deposition of the template silicon is crucial for its structural quality. [DOI: 10.1380/ejssnt.2009.405]
