PA50 Influence of temperature variation on FET properties using a solution-processed 8TNAT8

Abstract

In the field of organic electronics, solution-processed organic semiconductors for a large and flexible electronic device which is fabricated by low temperature process, in particular field effect transistors(FETs) have gotten much attention in these years. We used organic semiconductor, 8TNAT8, solutions (e.g. 0.1wt% toluene solution) for forming an organic semiconductor layer by casting method, and fablicated bottom-gate/bottom -contact type FETs. We have investigated the influence of surface morphology and FET properties of fabricated FETs at various temperatures.