2016 Volume 9 Issue 3 Pages 238-247
Spin-based integrated electronic devices utilizing both the spin and charge degrees-of-freedom of the electron, commonly known as spintronic devices, have been progressively explored. In particular, spintronic devices exploiting spin-current-induced magnetization dynamics, such as magnetoresistive random access memory (MRAM), spin torque nanooscillators (STNOs), and ferromagnetic nanowires, are expected to surpass CMOS devices in their ability to reduce power consumption and achieve high functionality. In this article, we propose a dynamical system design approach for spintronic devices, in which device dynamics underlying the operational mechanism of target devices are treated as dynamic systems from a mathematical viewpoint. Our aim is to establish a universal design and control theory independent of specific features of materials and substances. First, we overview the dynamics-based design approaches, which are a foundation for our approach, developed in the field of nonlinear science and technology. Next, we briefly review the operating characteristics of representative spintronic devices, such as MRAM and STNOs, in view of the aspects of dynamical systems. Furthermore, we present several case studies of our design approach for optimizing various synchronization schemes for STNO arrays. Finally, we discuss the extendability of our approach to the optimal control of advanced spintronic devices.
