Verification for Aluminum Multi-Charged Ions Generation Using ECR Ion Source

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Abstract

During semiconductor manufacturing, ions are injected into SiC, which is a common substrate material. Conventional ion-injection methods require high voltage to accelerate ions. This voltage can be decreased using multi-charged ions. In our laboratory, we can achieve ion injection via an electron cyclotron resonance ion source, which is relatively inexpensive compared with other ion sources and capable of generating multi-charged ions. The present research was conducted to improve the production rate of Ar7+, which has an ionization energy close to that of Al4+, and generate aluminum ions. The ion-extraction voltage and confinement time were optimized by adjusting the magnetic field in the chamber. The generation of aluminum ions could be confirmed using a sputtering source, and the usefulness of the latter was validated via the formation of the former. Research results were shared with plural KOSENs and the Nagaoka University of Technology students through Zoom, and we successfully confirmed the educational effect of the model core curriculum and development of the general-purpose abilities of the students.