Abstract
Specially designed equipments have been developed to realize 1.7 - 21 keV SR-EXAFS measurement apparatus for thin film structure studies. Not only usual measurements, but also reflectivity and fluorescence measurements under total reflection conditions are utilized to obtain EXAFS and to characterize the structures and surfaces of thin films. The analyses of the EXAFS reveal the structure differences among the amorphous thin films which were formed or thermally treated in the different conditions. These results are very important to develop the semiconductor and various electronic devices.
