Abstract
This article demonstrates the method of simple hot-filament-assisted chemical vapor deposition (CVD) for diamond growth. In this method, a tungsten filament at 2000 to 2350°C is used to dissociate gas mixtures containing about 3 vol% C2H2OH in H2. The filament is typically placed within 2 mm of the surface of a molybdenum substrate to produce diamond. Diamonds grown by this method are commonly bounded by cubic {100} or depressed octahedral {111} planes or combination of the two.
