Abstract
Ion-beam sputtering deposition is very useful to a nonconductive specimen-preparation technique for ultra-high to high resolution electron microscopy. Application of the sputtering has modified the ion-beam thinning apparatus for preparation of the sample for TEM. Effective use of our modified sputtering apparatus leads to a good conductivity of the Pt-coating composed of finer particles in 1.7nm diamerter, and a surface of crystal can be closely observed under magnifi-cation of more than 100, 000.
