DEGRADATION RELATED TO THE INTERCONNECTOR FOR CRYSTALLINE SILICON PV MODULES BY ACCELERATION TESTS

Abstract

We investigate degradation related to interconnector for crystalline Si PV modules after DML test or PCT. The module including the thin glass of 0.85 mm-thickness shows the dark EL area spreading along the bus bar electrodes of cells after the DML test, which is due to separation of a soldering between interconnector and module bus bar ribbon or a fracture of interconnector near ribbon wire.The crystalline Si PV modules after 600 hours in PCT shows generation of dark EL area from bus bar electrode of PV cells, and drop in FF, depending on the amount and type of flux when interconnector is tabbed on the bus bar of cells. Cross-sectional EDX analysis detect the presence of Sn and O on the surface of the Ag finger electrode in the dark EL area.