Abstract
We investigated improvement of n-bifacial Passivated Emitter and Rear Totally diffused (PERT) solar cell by selective emitter (SE) using non-mass separation type (NMS) ion implantation. Cell efficiency is obviously increased by introducing SE structure. Additionally, efficiency was increased with the increase in the sheet resistance of lightly doped layer, and the gain of η by SE structure was 0.4% absolute. Combining SE and other optimization of cell processes, we have achieved 21% efficiency. This result clearly shows the effectiveness of SE using the NMS ion implanter and the feasibility of high efficiency low cost solar cell using our cell process.
