REDUCTION IN CONNECTING RESISTIVITY OF INTERMEDIATE ADHESIVE LAYER FOR MECHANICALLY STACKED MULTI-JUNCTION SOLAR CELLS

Toshiyuki Sameshima; Kosuke Oshinari; Gen Kojitani; Maui Hino; Taichi Watanabe; Masaki Kondo; Mamiko Yagi; Masahiko Hasumi; Wakana Kubo; Jun-ichi Shirakashi; Mohamed Amara

doi:10.24752/gre.1.0_53

Japan council for Renewable Energy(2018)

DOI https://doi.org/10.24752/gre.1.0_53

Conference information

Host: Japan council for Renewable Energy(2018)

Name : Grand Renewable Energy 2018

Date : June 17, 2018 - June 22, 2018

REDUCTION IN CONNECTING RESISTIVITY OF INTERMEDIATE ADHESIVE LAYER FOR MECHANICALLY STACKED MULTI-JUNCTION SOLAR CELLS

*Toshiyuki Sameshima, Kosuke Oshinari, Gen Kojitani, Maui Hino, Taichi Watanabe, Masaki Kondo, Mamiko Yagi, Masahiko Hasumi, Wakana Kubo, Jun-ichi Shirakashi, Mohamed Amara

Author information

*Toshiyuki Sameshima
Tokyo University of Agriculture and Technology, Japan
Kosuke Oshinari
Tokyo University of Agriculture and Technology, Japan
Gen Kojitani
Tokyo University of Agriculture and Technology, Japan
Maui Hino
Tokyo University of Agriculture and Technology, Japan
Taichi Watanabe
Tokyo University of Agriculture and Technology, Japan
Masaki Kondo
Tokyo University of Agriculture and Technology, Japan
Mamiko Yagi
Tokyo University of Agriculture and Technology, Japan
Masahiko Hasumi
Tokyo University of Agriculture and Technology, Japan
Wakana Kubo
Tokyo University of Agriculture and Technology, Japan
Jun-ichi Shirakashi
Tokyo University of Agriculture and Technology, Japan
Mohamed Amara
Univ. of Lyon (INSA), France

Keywords: multi-junction solar cells, mechanical stacking, connecting resistivity, surface roughness, indium-tin-oxide

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 53-

Details

Abstract

Reduction of connecting resistivity at the intermediate region for the mechanically stacked multi-junction solar cells is discussed. The top and bottom silicon substrates are bonded using an epoxy-type adhesive dispersed with transparent and conductive indium-tin-oxide (ITO) particles. Forming the roughness on the bonding surfaces of the substrates by SF6/Ar plasma irradiation well decreased the connecting resistivity of the stacked samples. The roughness improves electrical contact between ITO particles and substrates. A low connecting resistivity of 0.12 omega cm2 was achieved for the stacked sample with 39-nm-surface roughness formed by the plasma treatment for 40 min.

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