Abstract
This paper presents a simple Si ink preparation from reusability of waste crystalline silicon (Si), including waste polycrystalline and single crystal silicon from photovoltaic industry, and transmogrified their structure into microcrystalline silicon (micro c-Si) powder yielding up 80% through a ball milling as a low-cost technique. Si films were reproduced from screen printing method by using Si ink. As-coated Si film was dried at low temperature (100 degree Celsius) receiving preferential film adhesion, homogeneous and high-quality thin films. Si films were annealed at various temperature conditions from 100-900 degree Celsius in order to study their stability of crystal lattice verified by X-ray diffractometer (XRD). It is found the high quality of Si crystal lattice stability (less than 5.3Å). This research addressed the existence of nanocrystalline Si with the average size around 80-90nm, which is independent with temperature anneal. In addition, Si film is adjustable dopant by varying volume ratio of phosphoric acid in the mixture of Si ink. It is a simple method to prepare Si films without using high thermal diffusion in order to widely use in microelectronic applications. Moreover, it shows that phosphorus (%atomic) in film decreases from 5.78 to 0.18%atomic with increasing temperature anneal from 100-700 degree Celsius owing to thermal diffusion behavior. It is also implied that Si film in this research obtains good diffusibility at low temperature range.
