Abstract
Quantum Dot structure has many types. In this paper, the new method to make Quantum Dots is presented. The new method is basically performed by simple following steps. 1. Diamond structure layer or Zinc blend structure layer are epitaxially grown over Si (100) wafer, 2. Impurity ions are implanted into Si wafer through above layer from 4-(110) directions (45 degree from wafer surface) By only these steps, regularly located impurity regions are formed in nm-scale and can be used as Quantum Dots. This new method has already been certificated by Japanese Government (Patent No 6224538). The paper will explains the theory of this method, and as an example, how to utilize the method to produce new type of solar cell, which has “special” p-type region.
