High Purity Silicon Detectors
1984 Volume 10 Issue 2-3 Pages 5-11
Details
1984 Volume 10 Issue 2-3 Pages 5-11
A new purification method for high purity p-type silicon crystal fabrication was recently developed in Japan. It has been experimentally confirmed that this ultra high-purity p-type silicon single crystal of a resistivity greater than 80 kohm-cm has a potentiality of obtaining thicker sensitive region compared with those of Si(Li) detectors. This paper describes the fabrication of the surface-barrier detectors, the detector characteristics and their application to radiation measurements. Several problems in applying this new material for detector fabrication are also discussed.
