Activities on the Development of Cryogenic Radiation Detectors made of Superconductor, Mono-crystal Semiconductor and Compound Semiconductor

Abstract

  Research activities on the development of cryogenic detectors are described. Employed materials are superconductor, p-Si and InSb. With Nb superconductor, we are developing normal metal-insulator-superconductor junction detector with large active area. The idea of the enlargement of the active area is described. On cryogenic p-Si detector, a new method of supplying holes to doped borons is proposed. Finally, a simple estimation of energy resolution for InSb detector is shown.