2002 Volume 28 Issue 1 Pages 7-12
A compound semiconductor, thallium bromide (TlBr), has been investigated as a radiation detector and photodetector material for use in X- and γ-ray spectroscopy. Single crystals of TlBr have been grown by the traveling molten zone method using zone-purified materials. The TlBr crystals have exhibited large mobility-lifetime products of 1-2 × 10-4 cm2/V and 4-9 × 10-5 cm2/V for electrons and holes, respectively. X- and γ-ray detectors have been fabricated from the TlBr crystals. An energy resolution of 30 keV FWHM has been recorded for 511 keV γ-rays with the TlBr detector at room temperature. Photodetectors for scintillation spectroscopy have been fabricated from the TlBr crystals by depositing a thin film of Au as an optically transparent electrode on the surface. Quantum efficiency of the TlBr photodetectors has been high in wavelength region below ~460 nm where scintillation emissions of LSO and GSO occur. The TlBr photodetector coupled to an LSO scintillator has exhibited an energy resolution of 34.5% for 511 keV γ-rays.