MOVPE growth of thick CdTe layers on Si substrate and their application to radiation detectors

Abstract

  MOVPE growths of thick CdTe layers on Si substrates for radiation imaging detectors with energy resolution were studied. Doping conditions for low resistive n-type and high resistive p-like CdTe layers were obtained using ethyliodine as an impurity source. Mechanism of high resistivity was studied. Gamma ray detection and energy resolution of p-like CdTe/n-CdTe/n+-Si diode type detectors were studied using ²⁴¹Am as a gamma-ray source. The detector showed energy resolution of 6% (FWHM 3.6keV at 59.5 keV) at -30℃.