Development of neutron detector using group-III nitride semiconductor

Abstract

  Recently, neutron detection techniques have been applied in various fields, and the development of each neutron detector suitable for widespread neutron detections is expected. BGaN has been proposed and developed as a new neutron semiconductor detection material. BGaN is a ternary nitride alloy including B atoms, and is a material capable of capturing neutrons and detecting signals in the sensitive layer. In this report, the concept of BGaN detection and the characteristics of the BGaN detector under development are introduced.