Characterization of SiO₂ Films Deposited by VUV-CVD Using Organic Siloxane Gases

Abstract

Recently, much attention has been paid to novel photochemical vapor deposition using vacuum ultraviolet excimer lamps (VUV-CVD), because thin films can be deposited at room temperature. We show some characterization of films and discuss about the reaction mechanism using organic siloxane gases in VUV-CVD. VUV photons dissociate organic gases into radical reactants of Si-O and impurities such as C-H and O-H in the gas phase. The reactants finally condense on the surface into films included SiO₂ and impurities. The reaction is different by adding O₂. It is caused by the behaviors of ozone and activated oxygen that VUV photons dissociate O₂ and are generated. The deposition efficiency is improved both by the low substrate temperature and the higher light-intensity of an excimer lamp. The film deposition at room temperature in VUV-CVD that either thermal or plasma induced damages are completely avoided must become a novel technique in thin films preparations.