Red-Light High-Power Laser Diodes Fabricated by Molecular Beam Epitaxy

Abstract

MOCVD method is generally adopted as the epitaxial growth method of AlGaInP red-light emitting laser diodes. Authors have succeeded in developing high-power red-light emitting laser diodes having long life by solid-source MBE method for the first time in the world. Contents in this paper are the explanation of the MBE system used in this study, the growth condition of high quality crystal, and fabrication process anDHigh power characteristics of loss-guide lasers and real-guide lasers. In the wavelength of 656nm, long life more than 2500 hours is obtained under the pulse condition of 70 mW, 70°C. This laser can be used as a light source for DVD-R/RW and DVD-RAM.