Development of High-Frequency SiC-MESFETs

Abstract

We have developed high power SiC-MESFETs for high-freqeuncy applications. We obtained a cut-off freqeuncy of 9.3 GHz and a maximum oscillation frequency of 34.2 GHz from a 0.5μm gate MESFET. We measured pulsed output power characteristics of 54.1 W at 1.0 GHz and 11.2 W at 9.4 GHz from a 39.2mm-gate-MESFET and a 9.6mm-gate-width MESFET, respectivly.