Dose Loss of Ultralow-energy Implanted Boron into Silicon during Annealing

Abstract

The dose loss of ultralow-energy implanted boron in silicon has been investigated. The uphill diffusion was closely correlated with dose loss of implanted boron during early annealing. The evolution of dose loss can be classified into three categories depending on the implant dose. The activation energy for the release of boron atoms from the Si/SiO₂ interface was found to be 2.6 eV.