IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electronic Devices>
Resistance Evaluation and Growth of Carbon Nanotubes
Fumiyuki NiheyHiroo HongoMasahiko IshidaHidefumi HiuraYukinori Ochiai
Author information
JOURNAL FREE ACCESS

2006 Volume 126 Issue 6 Pages 720-724

Details
Abstract

We have investigated electronic transport in single-wall carbon nanotubes attached to multiple electrodes. Resistance measurement using a pair of electrodes with different gaps enabled separate evaluation of nanotube resistivity and contact resistance. We found that the resistivity depends on nanotube diameter. Electrodes with gold or palladium exhibit similar contact resistance with an order of 10kΩ. Contact resistance is insensitive to back gate voltage, contrary to the Schottky-barrier transistor model. We also demonstrated the top-down control of diameter and position of Fe catalysts by means of “lithographically anchored nanoparticle synthesis (LANS)” for nanotube growth. Chemical vapor deposition by using these patterned particles successfully produced single-wall carbon nanotubes.

Content from these authors
© 2006 by the Institute of Electrical Engineers of Japan
Previous article Next article
feedback
Top