Low-Temperature Formation of Poly-Si_1-xGe_x (0≤x≤1) Films by Ni-Induced Lateral Crystallization for Advanced TFT

Abstract

Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si_1-xGe_x (0≤x≤1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si_1-xGe_x (0≤x≤1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.