IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electronic Materials>
Piezoelectricity and Visible Light Luminescence in Tetravalent-Metal-Doped Poled Silica Thin Films
Takehiko UnoSatoru NogeShun Fujitsuka
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2007 Volume 127 Issue 8 Pages 1147-1154

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Abstract

It is known that poling treatment in germanium-doped silica (Ge:SiO2) glass raises their optical nonlinearity and produces the Pockels effect. This means that the poling treatment in Ge:SiO2 produces asymmetricity in the glass. We generated piezoelectricity in poled Ge:SiO2 glass thin films. Tetravalent-metal-doped SiO2 (M4+:SiO2) films were prepared on Si substrates by RF magnetron sputtering. We used germanium, titanium, and tin as doping materials. However, less than a week later, piezoelectricity disappeared almost completely in all the samples. To prevent piezoelectricity from disappearing, we attempted to pin the doping ions. We developed a pinning technique based on the superstructure of a Ge-Ti-Sn:SiO2 and Ge-Ti-Zr:SiO2. The superstructure was very effective in preventing piezoelectricity from disappearing. Furthermore, broadband visible light emission was observed in the proposed superstructure film.

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© 2007 by the Institute of Electrical Engineers of Japan
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