Abstract
We fabricated hybrid complementary inverters with n-channel zinc oxide (ZnO) transistors as the n-type inorganic material and p-channel organic transistors using pentacene as the p-type organic material. The complementary inverter exhibited a large voltage gain of 10-12 and a cut off frequency of 0.5 kHz. ZnO thin film transistors show n-type semiconducting properties having field effect mobility of 2.1×10-3 cm2/Vs. On the other hand, pentacene thin film transistors show p-type semiconducting properties having field effect mobility of 3.2×10-2 cm2/Vs. We describe basic charge transfer characteristics of ZnO thin films. The results obtained here demonstrate that it is important for the transistor using ZnO to be injected charge from electrode to semiconducting material effectively.
