IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electronic Materials and Devices>
Ultra Thin AlN Layer Formation at Al(111) Surface by Supersonic N2 Beams
Yuden TeraokaAkitaka Yoshigoe
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2009 Volume 129 Issue 2 Pages 294-295

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Abstract
The Al(111) surface has been directly nitrided by supersonic N2 molecular beams at 473 K. A translational kinetic energy threshold of the nitridation was 1.8 eV. A nitrogen uptake curve obtained at the translational energy of 2.0 eV showed a linear profile with the nitrogen dose indicating non-protective layer formation. Al-2p photoemission spectra were involved a merely-shifted shoulder structure in the higher binding energy side so that sub-nitride components were included in the AlN overlayer.
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© 2009 by the Institute of Electrical Engineers of Japan
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