Surface Modification Using Highly Charged Ions

Abstract

The surfaces of HOPG and Si(111) irradiated with highly charged ions (HCIs) were observed using a secondary electron microscope (SEM) and an atomic force microscope (AFM). The SEM contrast appears between irradiated and unirradiated surfaces when the fluence come to 10¹³∼10¹⁴/cm², while the fluence of 10¹⁵∼10¹⁶/cm² is necessary for the irradiation with singly charged ions. The results exhibit that the potential energy of HCI produces surface modification efficiently without disturbing bulk structure.