Abstract
This paper proposes measurement site selection to visualize a wafer characterization map and also monitor wafer-to-wafer and batch-to-batch variation. In the manufacturing line of thin film devices such as large-scale integrated circuits, magnetic heads of hard disk drives and thin-film-transistor substrates of liquid-crystal projectors, several critical dimensions are generally measured and monitored for quality control. To monitor wafer-to-wafer and batch-to-batch variation, engineers control average and standard deviation of measured dimensions as statistical process control. To monitor characterization across a wafer, the engineers observe an sculptured surface as a wafer map. The paper presents a selection method to decide measurement sites across a wafer for both of the wafer map visualization and the process monitoring and examines their accuracies experimentally.
