Improvement of Current Gain in Triple Ion Implanted 4H-SiC Bipolar Junction Transistor with Etched Extrinsic Base Regions

Abstract

We demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT). By etching the extrinsic base regions using inductively coupled plasma dry etching, the characteristics of triple ion implanted 4H-SiC BJT were significantly improved. Maximum common emitter current gain was improved from 1.7 to 7.5.