IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
Special Issue Review
Recent Development on the Production Technology of Silicon Carbide Wafers
Tatsuo Fujimoto
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2010 Volume 130 Issue 6 Pages 917-919

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Abstract

Recent development and current status on the growth technology of silicon carbide (SiC) single crystals, long-known as a promising wide bandgap semiconductor material applicable to electronic devices of higher performance, are briefly described. The micropipe defect density, which is known to cause fatal problems in SiC devices, has been reduced significantly, and up to date no longer cited as the most harmful defect for device applications. In addition, such technological advance has led to the increase of the crystal diameters up to 100mm, evoking acceleration of SiC device productions.

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© 2010 by the Institute of Electrical Engineers of Japan
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