IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electrical and Electronic Circuit, LSI>
Study of Stacked NOR Type PRAM with Phase Change Channel Transistor
Sho KatoShigeyoshi Watanabe
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2011 Volume 131 Issue 12 Pages 2220-2221

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Abstract
In this paper stacked NOR type PRAM with phase change channel transistor has been newly proposed. Fast access time competitive to DRAM can be realized with stacked NOR type PRAM. The proposed scheme is a promissing candidate for realizing hight- performance, low cost non-volatile semiconductor memory.
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© 2011 by the Institute of Electrical Engineers of Japan
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