Abstract
The intervalence band absorption loss coefficient of active layer in semiconductor laser diodes operating at long wavelengths have been calculated for Al0.012Ga0.458In0.53As and In0.53Ga0.47As0.77P0.23 material with various hole density by taking into account of intraband relaxation time of 0.1 ps and 0.2 ps at 300 K and 400 K as parameters. Calculated results show that the loss and its temperature dependence of InGaAsP are larger than those of AlGaInAs material. The calculated intervalence band loss for InGaAsP is compared with the calculated data reported. The dependence of threshold current and quantum efficiency for both materials on intraband relaxation time as well as on the temperature in the wavelength range of 1.29∼1.6 μm have been calculated by using the density matrix theory. It obtained that AlGaInAs devices are superior in temperature performance to InGaAsP because T0 value for the former is higher (109 K) than that of the latter (85 K).
