IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electrical and Electronic Circuit, LSI>
Low Current Consumption of Multiple-Valued SRAM Using Λ-Shaped Negative Resistance Devices
Katsutoshi SaekiYoshiki SasakiYoshifumi Sekine
Author information
JOURNAL FREE ACCESS

2011 Volume 131 Issue 3 Pages 528-534

Details
Abstract
A number of studies have recently been made on multi-stable circuits. We previously proposed a multi-stable circuit using Λ-shaped negative resistance devices constituted by enhancement-mode MOSFETs and voltage sources. However, because this circuit contains a lot of biasing circuits, it is disadvantageous in points of the area and current consumption. Our research, aim at construction of artificial neural network equipped for the learning function using plastic synapses which are multiple-valued memory cells. In this paper, we propose the circuit configuration into which cut down the components in the bias circuit of the voltage, and we study the low current consumption of proposed circuit. As a result, it is shown that the bias circuit cut down the number of 2(n-1) (n: number of multiple-valued) MOSFETs. Furthermore, it is shown that proposed circuit works [nA] unit, because the bias circuit connects the state of the high impedance to the driver circuit.
Content from these authors
© 2011 by the Institute of Electrical Engineers of Japan
Previous article Next article
feedback
Top