Design Technology of Stacked NAND Type FeRAM with 2 Transistor Type Memory Cell

Abstract

Design method of stacked NAND type FeRAM with 2-transistor type memory cell has been newly proposed. With newly introduced WL voltage generator which enables to compensate drain current variation caused by mis-alignment of the ferro-electric film removal mask 4F² small cell size has been successfully realized. 32 stage of stacked NAND type FeRAM is a promising candidate for realizing high reliability compared with the conventional stacked NAND type 1-transistor FeRAM.