IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electronic Materials and Devices>
How Can We Monitor the Recovery of a Damaged Crystal by the Post Annealing?
Sachiko T. NakagawaTomoaki MurakamiMasakatsu NomuraHisao KandaEiichi SukedaiHarry J. Whitlow
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2014 Volume 134 Issue 4 Pages 479-483

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Abstract
In order to produce an effective semiconductor device an implanted dopant should be located on a crystalline lattice site, which requires a so-called post annealing (PA) step. The period of the PA takes a few milliseconds at the minimum, which is far beyond the time-limit of an empirical molecular dynamics (MD) simulation discussed here. Nevertheless, faint changes in the initial stage of the PA govern the following events. What happens after PA starts as time develops has been investigated in the frame work of the MD simulation in terms of the long-range-order (LRO) parameter. The LRO did not recover continuously as was expected, but instead exhibited spikes at almost regular time-intervals. This profile revealed that the restoration of crystallinity undergoes synergistically and oscillatory, i.e., local phonons emerge sporadically prior to the final stage of PA.
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© 2014 by the Institute of Electrical Engineers of Japan
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