IEEJ Transactions on Electronics, Information and Systems
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<Electronic Materials and Devices>
Improved Sensitivity and Durability of Poly(3-hexylthiophene) based Polymeric Photodetectors using Indium-tin-oxide Modified by Phosphonic Acid-based Self-assembled Monolayer Treatment
Hirotake KajiiYusuke SatoTaichiro MorimuneYutaka Ohmori
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2015 Volume 135 Issue 2 Pages 168-173

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Abstract
Organic photodetectors based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blends with indium-tin-oxide (ITO) modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. The mixed self-assembled monolayers (SAMs) serve to tune the surface free energy and the work function of ITO by varying the blend ratio. The phosphonic acid-based SAM treatment results not only in lowering of the injection barrier at the ITO/organic layer interface but also in the lowering of the contact resistance between ITO and the organic layer by analysis of impedance spectroscopy in P3HT hole-only device with SAMs. P3HT:PCBM device with ITO modified by short treatment time of 1H,1H,2H,2H-perfluorooctanephosphonic acid exhibits the incident-photon-to-current conversion efficiency of above 50 % at -2 V, high on/off ratio and improved durability.
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© 2015 by the Institute of Electrical Engineers of Japan
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