Characterization of p-ZnTe/n-ZnO Heterojunction Interface Prepared by Direct Bonding Technology

Abstract

We fabricated a p-ZnTe/n-ZnO heterojunction structure by a direct bonding technology. The surfaces of the p-ZnTe and n-ZnO substrates were activated by low-energy argon-ion bombardment under high vacuum, with keeping their roughness. Continuously, they brought into contact under controlled pressure at room temperature, and annealed in argon atmosphere as post process. Atomic-scale bonding was confirmed by transmission electron microscopy and scanning energy-dispersive X-ray spectroscopy. It was also confirmed that the electric rectifying characteristics depend on the bonding press time and the post anneal temperature.