Analytical Model of the Electron Density Peak Position of Nanosheet MOSFETs

Abstract

In this work, we propose an analytical model for predicting the peak position of electron density in Nanosheet MOSFETs. Quantum drift diffusion model is used to examine the distribution of electron density. Specifically, we investigate the gate voltage dependence of the electron density peak position for varying sheet film thicknesses, considering the analytical model for each thickness. Our investigation focuses on sheet film thicknesses of 10nm and 4nm. The results indicate that for the film thickness of 10nm, two electron density peaks are integrated at the center when the gate voltage is 0.4 V, whereas for the film thickness of 4nm, two peaks are integrated at the center with a gate voltage of 0.7 V. Utilizing the simulation results of electron density distribution, we estimate the parameters of the analytical model equation for both film thicknesses. Subsequently, we evaluate the estimated results by comparing them with the simulation results. The analytical model shows an accuracy with only 5.53% discrepancy from the simulation results for the film thickness of 10nm and only 4.01% discrepancy for the film thickness of 4nm.