2025 Volume 145 Issue 3 Pages 371-376
This article reviews the development of Si-based thermoelectric device conducted by the author’s group. A series of integrated thermoelectric devices of silicon-nanowire thermoelements were fabricated with a matured and standard Si-CMOS process, demonstrating scaling rules for miniaturization and large-scale integration on thermoelectric performance. The thermoelectric device exhibited a high specific power generation capacity of 0.9 µW/cm2K2. The optimum device layout to maximize the power generation capacity will be discussed in detail.
The transactions of the Institute of Electrical Engineers of Japan.C
The Journal of the Institute of Electrical Engineers of Japan