Temperature-Scaling Theory for Deep-Submicron Channel MOSFET Operated at Low Temperature

Abstract

Current-voltage characteristics of MOSFET can be scaled down in proportion to operation temperature using the temperature-scaling theory that has been proposed by the authors. We have discussed performances of the temperature-scaled MOSFET. It was shown that both the delay time and the power-delay product could be improved for deep-submicron MOSFET in which the velocity saturation occured. By introducing an idea of apparent saturation velocity, the temperature-scaling theory was also valid for the case in which the velocity overshoot occured. The temperature-scaled MOSFET with 0.12μm channel length could be operated at 77K without drain breakdown. The gate delay time of the MOSFET with 0.12μm channel length at 77K was estimated to be 1.7ps. The optimum supply voltage at 77K was considered to be about 1.2V according to the temperaturescaling theory.