Abstract
There is currently a demand for active electronic components that function reliably at ambient temperatures over 300°C. This is especially true for instrumentation used in controlling jet engines in military aircraft. The IIL (Integrated Injection Logic) is a bipolar digital IC which has the ability to switch at temperatures higher than the TTL (Transistor-Transistor Logic).
To operate an IIL inverter at a high-temperature, its low-level output voltage must be kept at a low level and its high-level output voltage must be kept at a high level, even in high-temperature conditions. To satisfy these requirements, the built-in voltage of forward-biased junctions should be high and the leakage current of reverse-biased junctions should be low. The actual carrier concentrations are determined by comparing the experimental results from the characteristics of PN junctions with various carrier concentrations at high-temperatures.
To make the proposed original structure with high-carrier concentrations, we apply selective ion-implantation and successive epitaxy steps to the IIL, fabrication process.
The IIL, inverters made in this experiment operate at temperatures higher than 370°C.
