Abstract
LWIR 64×64 focal plane arrays (FPAs) were fabricated for detecting 10 μm wavelength radiation, using HgCdTe epilayers. The photodiode arrays were hybridized to Si readout circuits with In bump technique. Noise equivalent temperature differences (NETDs) were estimated for two methods of Si circuits, line address and pixel integration. We also evaluated performance in CCD and MOS circuits as the signal readout circuits.
NETDs showed 0.07K with line address method and 0.14K with pixel integration method. NETD values in the signal readout circuits made no significant difference between CCD and MOS circuits.
