Disordering of Hetero-Interface in (Cd, Zn) (S, Se) Strained Layer Superlattice Structure

Abstract

We have investigated the phenomenon of layer disordering in CdZnSe/ZnSe strained layer superlattices by Ge-diffusion and have fabricated CdZnSe/ZnSe optical waveguides using the Ge-induced disordering. Lateral optical confinement in stripe geometry laser was confirmed by observing the near field distribution of guided wave. We also report the first confirmation of disordering of CdZnSe/ZnSe strained layer superlattices by ionimplantation and low temperature annealing. We confirmed that superlattice structure was disordered by Si ion implantation and subsequent annealing at 300°C.