A new substrate engineering for the formation of Empty Space in Silicon (ESS) induced by silicon surface migration

Abstract

A new technique to form the silicon on nothing (SON) structure is presented as an alternative to the silicon on insulator (SOI) structure. A large plate-shaped empty space in silicon (ESS) below the surface of the silicon substrate can be fabricated by connecting the spherical empty spaces, which are formed by the surface migration of silicon on patterned silicon substrate. ESS technique has a potential to change the micro-process for the fabrication oflarge-scale integrated circuits (LSI) and it can be applied to various manufacturing technologies.