Three-Dimensional Simulation of Planar Solid Oxide Fuel Cell Stack

Abstract

The authors have already developed the simulation codes for the one channel region and the single cell plate in the cell stack of planar type solid oxide fuel cell (SOFC). To accurately calculate the effect of radiation heat transfer from and to the cell stack surfaces, however, a code that can treat the whole cell stack is necessary. In the present study, therefore, the authors newly develop a three-dimensional simulation code of the planar SOFC stack, and detailed effect of radiation heat transfer is investigated. It is made clear that sufficiently high temperature for power generation can be maintained at the central part of the cell stack even under low ambient temperature condition. This is because the thermal conductivity of the cell materials made of ceramics is very small and the central part of the cell stack is almost free from the influence of radiation heat transfer. The stack simulation is needed to accurately calculate the cell stack voltage, because the radiation heat transfer from the cell top and bottom surfaces reduces it when the ambient temperature is low. The bad influence of the low ambient temperature on the voltage is, however, small and relatively high cell stack voltage is obtained even when the ambient temperature is very low.