High Resolution and Analytical Electron Microscopy Study of Si₃N₄-Ni Bonded Interface

Abstract

A detailed characterization of the ceramic-metal interface was carried out for a Si₃N₄-Ni system bonded in vacuum at 1 273 K. High resolution electron microscopy and analytical electron microscopy were used in the characterization of the interface. Reaction products such as nickel silicides were not present at the interface. It was demonstrated that Si₃N₄ reacts with Ni in accordance with the solid-state reaction mechanism proposed in this study. The final reaction product is thought to be Ni with Si and N in solid solution.