High Performance of Solution-Processed Organic Field-Effect Transistors using Embedded Electrodes

Abstract

Top-gate organic FETs with embedded source-drain electrodes using a printable organic semiconductor, 2, 7-dioctyl [1] benzothieno [3, 2-b] [1] benzothiophene (C₈-BTBT), have been fabricated. The top-gate C₈-BTBT FETs with embedded electrodes show better electrical performance : higher mobilities (4.9cm²/Vs) and lower threshold voltages (0.6V) in comparison with those of the top-gate FETs with a conventional electrode configuration. Such high mobility is comparable to that of microcrystalline silicon FETs.